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Structural and electrical analysis of In–Sb–Te‐based PCM cells
Author(s) -
Fallica Roberto,
Stoycheva Toni,
Wiemer Claudia,
Longo Massimo
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201308074
Subject(s) - ternary operation , phase change memory , chemical vapor deposition , thermal stability , materials science , tin , alloy , ternary alloy , threshold voltage , dielectric , antimony , metalorganic vapour phase epitaxy , analytical chemistry (journal) , chemical engineering , optoelectronics , chemistry , nanotechnology , voltage , metallurgy , layer (electronics) , transistor , electrical engineering , epitaxy , computer science , engineering , programming language , chromatography
Two In–Sb–Te compounds with low Te content (12 at.% and 17 at.%), deposited by metalorganic chemical vapour deposition, were implemented into prototype phase‐change memory devices of size 50 × 50 nm 2 and 93 × 93 nm 2 . These chalcogenides yielded devices with higher threshold voltage than those based on Ge–Sb–Te alloys. The endurance and programming window were markedly improved (from 10 3 to 10 6 cycles and from 1 to 2 orders of magnitude, respectively) when employing the Te‐richer alloy. Moreover, in situ structural and electrical analysis on TiN/In–Sb–Te/dielectric stacks provided additional insight on the thermal stability of the two ternary phases In 3 SbTe 2 and InSb 0.8 Te 0.2 , which were found to coexist in these compounds. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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