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High aspect ratio semiconducting nanostructure random networks: highly versatile materials for multiple applications
Author(s) -
Ter Céline,
Serre Pauline,
Rey Germain,
Holtzinger Claire,
Periwal Priyanka,
Martin Mickaël,
Baron Thierry,
Stambouli Valérie,
Langlet Michel
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201308047
Subject(s) - nanowire , nanostructure , materials science , fabrication , magnification , nanotechnology , flexibility (engineering) , wetting , aspect ratio (aeronautics) , filtration (mathematics) , optoelectronics , computer science , composite material , mathematics , artificial intelligence , medicine , statistics , alternative medicine , pathology
In this work we demonstrate that, based on a simple and versatile fabrication method, the collective use and integration of high aspect ratio (AR) nanostructures, here Si and ZnO nanowires (NWs), is possible and addresses multiple application fields, including light detection, active materials for bio‐sensing devices, or materials with interesting wettability properties. A suitable implementation of the filtration method enables then to design networks composed of semiconducting NWs with AR in the range of 10–400. Even for the lowest AR, the network is coherent. However, good electrical properties and flexibility are obtained only for AR greater than 50.Si nanowire (SiNW) random networks observed by SEM: Large magnification showing the nanowires and low magnification showing the electrical test structure. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)