Effect of nitrogen doping on the thermal conductivity of GeTe thin films | Zendy

Fallica Roberto | Zendy; Varesi Enrico | Zendy; Fumagalli Luca | Zendy; Spadoni Simona | Zendy; Longo Massimo | Zendy; Wiemer Claudia | Zendy

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Effect of nitrogen doping on the thermal conductivity of GeTe thin films

Author(s) -

Fallica Roberto,

Varesi Enrico,

Fumagalli Luca,

Spadoni Simona,

Longo Massimo,

Wiemer Claudia

Publication year - 2013

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201308026

Subject(s) - thermal conductivity , materials science , amorphous solid , doping , thin film , stoichiometry , conductivity , nitrogen , phase (matter) , thermal , interfacial thermal resistance , analytical chemistry (journal) , composite material , thermal resistance , nanotechnology , thermodynamics , chemistry , crystallography , optoelectronics , physics , organic chemistry , chromatography

The 3 ω method was employed to determine the effect of nitrogen doping (5 at.%) on the thermal conductivity of sputtered thin films of stoichiometric GeTe (a material of interest for phase change memories). It was found that nitrogen doping has a detrimental effect on the thermal conductivity of GeTe in both phases, but less markedly in the amorphous (–25%) than in the crystalline one (–40%). On the opposite, no effect could be detected on the measured thermal boundary resistance between these films and SiO 2 , within the experimental error. Our results agree with those obtained by molecular dynamic simulation of amorphous GeTe. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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