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Effect of nitrogen doping on the thermal conductivity of GeTe thin films
Author(s) -
Fallica Roberto,
Varesi Enrico,
Fumagalli Luca,
Spadoni Simona,
Longo Massimo,
Wiemer Claudia
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201308026
Subject(s) - thermal conductivity , materials science , amorphous solid , doping , thin film , stoichiometry , conductivity , nitrogen , phase (matter) , thermal , interfacial thermal resistance , analytical chemistry (journal) , composite material , thermal resistance , nanotechnology , thermodynamics , chemistry , crystallography , optoelectronics , physics , organic chemistry , chromatography
The 3 ω method was employed to determine the effect of nitrogen doping (5 at.%) on the thermal conductivity of sputtered thin films of stoichiometric GeTe (a material of interest for phase change memories). It was found that nitrogen doping has a detrimental effect on the thermal conductivity of GeTe in both phases, but less markedly in the amorphous (–25%) than in the crystalline one (–40%). On the opposite, no effect could be detected on the measured thermal boundary resistance between these films and SiO 2 , within the experimental error. Our results agree with those obtained by molecular dynamic simulation of amorphous GeTe. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)