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Hole mobility and remote scattering in strained InGaSb quantum well MOSFET channels with Al 2 O 3 oxide
Author(s) -
Kumar Madisetti Shailesh,
Chidambaram Thenappan,
Nagaiah Padmaja,
Tokranov Vadim,
Yakimov Michael,
Oktyabrsky Serge
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201307243
Subject(s) - scattering , electron mobility , materials science , condensed matter physics , oxide , mosfet , quantum well , barrier layer , quantum hall effect , optoelectronics , layer (electronics) , physics , electron , transistor , nanotechnology , optics , laser , quantum mechanics , voltage , metallurgy
Hall mobility and major scattering mechanisms in surface and buried MBE grown strained InGaSb quantum well (QW) MOSFET channels with in‐situ grown Al 2 O 3 gate oxide are analyzed as a function of sheet hole density, top‐barrier thickness and temperature. Mobility dependence on Al 0.8 Ga 0.2 Sb top‐barrier thickness shows that the relative contribution of interface‐related scattering is as low as ∼30% in the surface QW channel. An InAs top capping layer reduces the interface scattering even further; the sample with 3 nm total top‐barrier thickness demonstrates mobility of 980 cm 2 /Vs giving sheet resistance of 4.3 kΩ/sq, very close to the minimum QW resistance in the bulk. The mobility–temperature dependences indicate that the interface‐related scattering is dominated by remote Coulomb scattering at hole densities <1 × 10 12 cm –2 . (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)