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Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates
Author(s) -
Anufriev Roman,
Chauvin Nicolas,
Khmissi Hammadi,
Naji Khalid,
Patriarche Gilles,
Gendry Michel,
BruChevallier Catherine
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201307242
Subject(s) - nanowire , heterojunction , photoluminescence , optoelectronics , quantum wire , materials science , quantum well , quantum dot , silicon , excitation , quantum , quantum efficiency , physics , optics , quantum mechanics , laser
Photoluminescence (PL) quantum efficiency (QE) is experimentally investigated, using an integrating sphere, as a function of excitation power on both InAs/InP quantum rod nanowires (QRod‐NWs) and radial quantum well nanowires (QWell‐NWs) grown on silicon substrates. The measured values of the QE are compared with those of the planar analogues such as quantum dash and quantum well samples, and found to be comparable for the quantum well structures at relatively low power density. Further studies reveal that the values of QE of the QRod‐NWs and QWell‐NWs are limited by the low quality of the InP NW structure and the quality of radial quantum well, respectively. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)