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Efficiency enhancement of Cu(In,Ga)Se 2 thin‐film solar cells by a post‐deposition treatment with potassium fluoride
Author(s) -
Laemmle Anke,
Wuerz Roland,
Powalla Michael
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201307238
Subject(s) - copper indium gallium selenide solar cells , solar cell , potassium , potassium fluoride , doping , open circuit voltage , materials science , deposition (geology) , energy conversion efficiency , chemical bath deposition , fluoride , analytical chemistry (journal) , alkali metal , chemistry , inorganic chemistry , band gap , optoelectronics , voltage , metallurgy , electrical engineering , paleontology , organic chemistry , chromatography , sediment , biology , engineering
Alkali‐free Cu(In,Ga)Se 2 (CIGS) absorbers grown on Mo‐coated alumina (Al 2 O 3 ) substrates were doped with potassium (K) after CIGS growth by a potassium fluoride (KF) post‐deposition treatment (PDT). The addition of K to the absorber leads to a strong increase in cell efficiency from 10.0% for the K‐free cell to 14.2% for the K‐doped cell, mainly driven by an increase in the open‐circuit voltage V oc and the fill factor FF, and to an increase in the net charge carrier density. Hence K doping by KF‐PDT is comparable to doping with Na.J – V characteristics of a CIGS solar cell with KF‐PDT (red solid line) and of a K‐free reference cell without treatment (black dashed line). The solar cell treated with K shows a strong increase in V oc and FF compared to the solar cell without K. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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