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Si substrate preparation for the VS and VLS growth of InAs nanowires
Author(s) -
Rieger Torsten,
Grützmacher Detlev,
Lepsa Mihail Ion
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201307229
Subject(s) - nanowire , substrate (aquarium) , materials science , context (archaeology) , vapor–liquid–solid method , molecular beam epitaxy , nanotechnology , layer (electronics) , chemical engineering , epitaxy , paleontology , oceanography , engineering , biology , geology
The growth of self‐catalyzed InAs nanowires on Si(111) substrates via vapour–solid (VS) and vapour–liquid–solid (VLS) growth mechanisms is investigated using molecular beam epitaxy. For both mechanisms, the substrate preparation plays a crucial role. In this context, the required thin oxide layer for the VS growth of the nanowires is obtained by treating the HF‐cleaned Si substrate with hydrogen peroxide. For the VLS growth, Ga is predeposited on the unprocessed Si substrate. The Ga forms droplets, which etch the native oxide and create the necessary pinholes.(© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)