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Light‐induced degradation in indium‐doped silicon
Author(s) -
Möller Christian,
Lauer Kevin
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201307165
Subject(s) - indium , silicon , doping , materials science , boron , annealing (glass) , acceptor , charge carrier , kinetics , carrier lifetime , degradation (telecommunications) , optoelectronics , analytical chemistry (journal) , chemistry , electronic engineering , condensed matter physics , metallurgy , physics , organic chemistry , chromatography , quantum mechanics , engineering
Light‐induced degradation of charge carrier lifetime was observed in indium‐doped silicon. After defect formation, an annealing step at 200 °C for 10 min deactivates the defect and the initial charge carrier lifetime is fully recovered. The observed time range of the defect kinetics is similar to the well known defect kinetics of the light‐induced degradation in boron‐doped samples. Differences between defect formation in boron‐ and indium‐doped silicon are detected and discussed. A new model based on an acceptor self‐interstitial A Si –Si i defect is proposed and established with experimental findings and existing ab‐initio simulations.Charge carrier lifetime degradation during light soaking of indium‐doped samples with different oxygen concentrations. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)