Premium
Air stability of PTCDI‐C13‐based n‐OFETs on polymer interfacial layers
Author(s) -
Roh Jeongkyun,
Lee Jaemin,
Kang Chanmo,
Lee Changhee,
Jung Byung J.
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201307150
Subject(s) - organic field effect transistor , electron mobility , thermal stability , glass transition , annealing (glass) , materials science , active layer , transistor , diimide , polymer , dielectric , threshold voltage , optoelectronics , thin film transistor , layer (electronics) , field effect transistor , chemical engineering , chemistry , nanotechnology , molecule , voltage , organic chemistry , composite material , electrical engineering , perylene , engineering
This Letter reports the novel use of poly(9‐vinylcarbazole) (PVK) as a dielectric interfacial layer for n‐type organic field‐effect transistors (n‐OFETs). With PVK, both the air stability and electron mobility of N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C13)‐based OFETs were improved. Among the PVKs with different weight‐average molecular weight ( M w ), PVK with high M w showed good performance. The high glass transition temperature of PVK enabled thermal post annealing of the active layer, which resulted in a high electron mobility of 0.61 cm 2 /Vs. This mobility was maintained at 90% and 59% after 4 days and 105 days in air, respectively. The PVK interfacial layer reduced the trapped charges in the PTCDI‐C13‐based n‐OFET for air‐exposure and caused a decrease in the threshold voltage shift.(© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)