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MgZnO avalanche photodetectors realized in Schottky structures
Author(s) -
Yu J.,
Shan C. X.,
Liu J. S.,
Zhang X. W.,
Li B. H.,
Shen D. Z.
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201307085
Subject(s) - apds , avalanche photodiode , optoelectronics , photodetector , microsecond , electric field , impact ionization , avalanche breakdown , materials science , avalanche diode , schottky diode , ultraviolet , single photon avalanche diode , ionization , detector , optics , physics , diode , breakdown voltage , electrical engineering , ion , engineering , voltage , quantum mechanics
MgZnO‐based ultraviolet avalanche photodetectors (APDs) have been fabricated from Au/MgO/Mg 0.44 Zn 0.56 O/MgO/Au Schottky structures. The carrier avalanche multiplication is realized via an impact ionization process occurring in the MgO layer under relatively large electric field. The APDs exhibit an avalanche gain of 587 at 31 V bias, and the response speed of the APDs is in the order of microseconds.(© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)