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High frequency noise of epitaxial graphene grown on sapphire
Author(s) -
Ardaravicˇius L.,
Liberis J.,
Šermukšnis E.,
Matulionis A.,
Hwang J.,
Kwak J. Y.,
Campbell D.,
Alsalman H. A.,
Eastman L. F.,
Spencer M. G.
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201307074
Subject(s) - sapphire , graphene , shot noise , chemical vapor deposition , noise (video) , materials science , microwave , epitaxy , optoelectronics , electric field , layer (electronics) , condensed matter physics , physics , nanotechnology , optics , laser , quantum mechanics , artificial intelligence , detector , computer science , image (mathematics)
Microwave noise technique is applied to study in‐plane electronic properties of epitaxial graphene grown on sapphire by chemical vapor deposition and subjected to high electric field applied in the plane. The noise spectrum is measured in the field direction at room temperature. While a 1/ f 1.25 ‐type dependence is observed in the 200 MHz–2.5 GHz band, a shot noise contribution is resolved at 10 GHz. The shot noise is possibly associated with hole jumps across the potential barriers located in the graphene layer. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)