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Flexible InGaZnO thin film transistors using stacked Y 2 O 3 /TiO 2 /Y 2 O 3 gate dielectrics grown at room temperature
Author(s) -
Hsu HsiaoHsuan,
Chang ChunYen,
Cheng ChunHu
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201307047
Subject(s) - thin film transistor , threshold voltage , transistor , materials science , optoelectronics , low voltage , dielectric , electron mobility , voltage , swing , electrical engineering , gate dielectric , nanotechnology , engineering , layer (electronics) , mechanical engineering
In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin‐film transistor (TFT) using room‐temperature processed Y 2 O 3 /TiO 2 /Y 2 O 3 gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub‐threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm 2 /V s, and a large I on / I off ratio of 1.7 × 10 6 . The low operation voltage, small sub‐threshold swing and high mobility could be ascribed to the combination of high‐ κ TiO 2 and large band gap Y 2 O 3 , which provide the potential to meet the requirements of low‐temperature and low‐power portable electronics.(© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)