Semipolar (11\bar 2\bar 2) ZnO thin films grown on LaAlO 3 ‐buffered LSAT (112) single crystals by pulsed laser deposition

Semipolar (11\bar 2 \bar 2) ZnO was successfully grown on (112) LaAlO 3 /(LaAlO 3 ) 0.29 (Sr 2 AlTaO 6 ) 0.35 substrate by pulsed laser deposition. The epitaxial relationship is [11\bar 23]_{\rm ZnO} // [11\bar 1]_{\rm LAO/LSAT} with the polar axis of [000\bar 1]_{\rm ZnO} pointing to the surface. For ZnO films with thickness of 1.6 μm, the threading dislocation density is ∼1 × 10 9 cm –2 , and the density of basal stacking faults is below 1 × 10 4 cm –1 . The (11\bar 2 \bar 2) ZnO exhibits strong D 0 X emissions with a FWHM of 9 meV and very few green–yellow emissions in the low‐temperature (10 K) and room‐temperature photoluminescence spectra, respectively.The XRD 2 θ – θ pattern of 1.6 μm ZnO films grown on (112) LaAlO 3 /LSAT only reveals a sharp (11\bar 2 \bar 2) ZnO reflection for ZnO. The inset figure is the XRD rocking curve of (11\bar 2 \bar 2) ZnO with a FWHM of 0.084°. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)