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Thermal conductivity of thermoelectric Al‐substituted ZnO thin films
Author(s) -
VogelSchäuble Nina,
Jaeger Tino,
Romanyuk Yaroslav E.,
Populoh Sascha,
Mix Christian,
Jakob Gerhard,
Weidenkaff Anke
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201307025
Subject(s) - thermal conductivity , materials science , sapphire , thermoelectric effect , figure of merit , thin film , seebeck coefficient , electrical resistivity and conductivity , thermoelectric materials , sputtering , composite material , optoelectronics , optics , nanotechnology , thermodynamics , electrical engineering , physics , laser , engineering
ZnO:Al thin films with a low electrical resistivity were grown by magnetron sputtering on sapphire substrates. The cross‐plane thermal conductivity ( κ = 4.5 ± 1.3 W/mK) at room temperature is almost one order of magnitude lower than for bulk materials. The thermoelectric figure of merit ZT at elevated temperatures was estimated from in‐plane power factor and the cross‐plane thermal conductivity at room temperature. It is expected that the thermal conductivity drops with increasing temperature and is lower in‐plane than cross‐plane. Consequently, the thin film ZT is at least three times higher than for bulk samples at intermediate temperatures. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)