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Temperature‐dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN quantum wells
Author(s) -
Zeng Jianping,
Li Wei,
Yan Jianchang,
Wang Junxi,
Cong Peipei,
Li Jinmin,
Wang Weiying,
Jin Peng,
Wang Zhanguo
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201307004
Subject(s) - redshift , photoluminescence , blueshift , ultraviolet , atmospheric temperature range , materials science , spectroscopy , metalorganic vapour phase epitaxy , quantum well , optoelectronics , physics , astrophysics , condensed matter physics , optics , laser , nanotechnology , astronomy , galaxy , meteorology , epitaxy , layer (electronics)
Radiative and nonradiative processes in deep ultraviolet (DUV) AlGaN/AlGaN multiple quantum wells (MQWs) grown by LP‐MOCVD have been studied by means of deep ultraviolet time‐integrated photoluminescence (PL) and time‐resolved photoluminescence (TRPL) spectroscopy. As the temperature is increased, the peak energy of DUV‐AlGaN/AlGaN MQWs PL emission ( E p ) exhibits a similarly anti‐S‐shaped behavior (blueshift – accelerated redshift – decelerated redshift): E p increases in the temperature range of 5.9–20 K and decreases for 20–300 K, involving an accelerated redshift for 20–150 K and an opposite decelerated redshift for 150–300 K with temperature increase. Especially at high temperature as 300 K, the slope of the E p redshift tends towards zero. This temperature‐induced PL shift is strongly affected by the change in carrier dynamics with increasing temperature. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)