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Back Cover: A facile method for flexible GaN‐based light‐emitting diodes (Phys. Status Solidi RRL 11/2012)
Author(s) -
Jung Younghun,
Wang Xiaotie,
Kim Sung Hyun,
Ren Fan,
Kim Jihyun,
Pearton Stephen J.
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201290026
Subject(s) - light emitting diode , materials science , optoelectronics , polyethylene terephthalate , sapphire , diode , substrate (aquarium) , etching (microfabrication) , gallium nitride , laser , nanotechnology , composite material , optics , layer (electronics) , oceanography , physics , geology
Flexible GaN‐based light‐emitting diodes (LEDs) on polyethylene terephthalate (PET) substrates are demonstrated by Younghun Jung et al. in their Letter on pp. 421–423 . The process uses commercial LEDs on patterned sapphire substrates, laser lift‐off (LLO), wet etching for additional surface roughening, and mounting of the freestanding LED on a PET substrate. Electrical and optical properties from the free‐standing LLO‐LEDs mounted on the flexible PET substrates were characterized. This process, illustrated on the back cover, is highly practical and can be easily implemented in a manufacturing process to fabricate large‐scale flexible GaN‐based LEDs.