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Cover Picture: Tunable n‐ and p‐type doping of single‐layer graphene by engineering its interaction with the SiO 2 support (Phys. Status Solidi RRL 2/2012)
Author(s) -
Nourbakhsh Amirhasan,
Cantoro Mirco,
Li Bing,
Müller Robert,
De Feyter Steven,
Heyns Marc M.,
Sels Bert F.,
De Gendt Stefan
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201290000
Subject(s) - graphene , doping , materials science , cover (algebra) , silane , monolayer , nanotechnology , optoelectronics , composite material , engineering , mechanical engineering
As shown by Amirhasan Nourbakhsh et al. (see their Letter on pp. 53–55 ), non‐destructive n‐ and p‐type doping of graphene has been achieved by tuning the interaction between graphene and a self‐assembled monolayer of 3‐aminopropyl triethoxy silane. The type of doping could be controlled by changing the pH value of the immersing solutions. The results of the experiments described in this work represent a convenient solution to the problem of tailoring the electronic properties of graphene for many applications which require a fine control of the charge density.