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Resistive switching behaviour of a tantalum oxide nanolayer fabricated by plasma oxidation
Author(s) -
Tang G. S.,
Zeng F.,
Chen C.,
Gao S.,
Fu H. D.,
Song C.,
Wang G. Y.,
Pan F.
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206534
Subject(s) - tantalum , materials science , oxide , resistive random access memory , non volatile memory , plasma , thermal conduction , optoelectronics , oxygen , ion , nanotechnology , cmos , nanoscopic scale , resistive touchscreen , electrode , electrical engineering , chemistry , metallurgy , composite material , physics , organic chemistry , quantum mechanics , engineering
We investigate the resistive switching behaviour of a tantalum oxide nanolayer‐based nonvolatile memory with Pt/TaO 5– x /TaN structure, which was prepared at room temperature through a processing compatible with CMOS technology. The tantalum oxide nanolayer with thickness of about 5 nm was fabricated by plasma oxidation of TaN films. The switching mechanism can be explained by the modulation of the local oxygen‐deficient conduction channel resulting from oxygen ions drift. This Letter represents a cost‐efficient method for developing nanoscale restive switching nonvolatile memories. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)