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Evidence of two‐photon absorption in strain‐free quantum dot GaAs/AlGaAs solar cells
Author(s) -
Scaccabarozzi Andrea,
Adorno Silvia,
Bietti Sergio,
Acciarri Maurizio,
Sanguinetti Stefano
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206518
Subject(s) - quantum dot , photocurrent , optoelectronics , solar cell , absorption (acoustics) , quantum dot solar cell , strain (injury) , materials science , gallium arsenide , fabrication , photon , multiple exciton generation , band gap , photon energy , physics , optics , polymer solar cell , medicine , alternative medicine , pathology , composite material
We report the fabrication procedure and the characterization of an Al 0.3 Ga 0.7 As solar cell containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub‐bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain‐free materials, opens new opportunities for quantum dot based solar cells.Left: Scheme of the fabricated quantum dot solar cell. Right: 1 × 1 µm 2 image of the dot layer. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)