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Fabrication and characteristics of solution‐processed graphene oxide–silicon heterojunction
Author(s) -
Kalita Golap,
Wakita Koichi,
Umeno Masayoshi,
Tanemura Masaki
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206516
Subject(s) - heterojunction , graphene , materials science , optoelectronics , oxide , fabrication , silicon , substrate (aquarium) , band gap , nanotechnology , oceanography , medicine , alternative medicine , pathology , geology , metallurgy
We demonstrate the fabrication of a solid state heterojunction photovoltaic device with solution‐processed graphene oxide (GO) and n‐Si. Partially reduced GO with a high optical gap (2.8 eV) was spin‐coated on the n‐Si substrate and a heterojunction device was fabricated with the structure of Au/pr‐GO/n‐Si. In the fabricated device, incident light was transmitted through the thin GO film to reach the junction interface, generating photoexciton, and thereby a photovoltaic action was observed. By means of a built‐in electric potential at the GO/n‐Si junction, photoexcited electrons and holes can be separated, transported and collected at the electrodes.Solid state heterojunction device fabricated with solution‐processed graphene oxide (high optical gap ∼2.8 eV) and n‐Si. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)