Fabrication and characteristics of solution‐processed graphene oxide–silicon heterojunction

We demonstrate the fabrication of a solid state heterojunction photovoltaic device with solution‐processed graphene oxide (GO) and n‐Si. Partially reduced GO with a high optical gap (2.8 eV) was spin‐coated on the n‐Si substrate and a heterojunction device was fabricated with the structure of Au/pr‐GO/n‐Si. In the fabricated device, incident light was transmitted through the thin GO film to reach the junction interface, generating photoexciton, and thereby a photovoltaic action was observed. By means of a built‐in electric potential at the GO/n‐Si junction, photoexcited electrons and holes can be separated, transported and collected at the electrodes.Solid state heterojunction device fabricated with solution‐processed graphene oxide (high optical gap ∼2.8 eV) and n‐Si. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)