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Flexible semi‐transparent silicon (100) fabric with high‐k/metal gate devices
Author(s) -
Rojas Jhonathan P.,
Hussain Muhammad Mustafa
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206490
Subject(s) - electronics , materials science , silicon , wafer , optoelectronics , flexible electronics , schematic , characterization (materials science) , flexibility (engineering) , stack (abstract data type) , lithography , nanotechnology , computer science , electrical engineering , engineering , statistics , mathematics , programming language
Abstract Can we build a flexible and transparent truly high performance computer? High‐k/metal gate stack based metal–oxide–semiconductor capacitor devices are monolithically fabricated on industry's most widely used low‐cost bulk single‐crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi‐transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state‐of‐the‐art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra‐ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers.Schematic and photograph of flexible high‐k/metal gate MOSCAPs showing high flexibility and C–V plot showing uncompromised performance. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)