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Nitride‐based hetero‐field‐effect‐transistor‐type photosensors with extremely high photosensitivity
Author(s) -
Ishiguro Mami,
Ikeda Kazuya,
Mizuno Masataka,
Iwaya Motoaki,
Takeuchi Tetsuya,
Kamiyama Satoshi,
Akasaki Isamu
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206483
Subject(s) - photodetector , optoelectronics , photosensitivity , materials science , transistor , photodiode , specific detectivity , photoconductivity , field effect transistor , dark current , physics , voltage , quantum mechanics
AlGaN/GaN hetero‐field‐effect‐transistor‐type (HFET‐type) photosensors are fabricated with a p‐GaInN optical gate for the detection of visible light. These photosensors employ a two‐dimensional electron gas at the heterointerface between AlGaN and GaN as a highly conductive channel with a high electron mobility. By changing the InN molar fraction in the p‐GaInN optical gate, the wavelength range of the photosensitivity of the HFET‐type photosensors can be controlled. The photosensitivity of the AlGaN/GaN HFET‐type photosensors with a p‐GaInN optical gate greatly surpassed those of commercially available Si pin and Si avalanche photodiodes, and was comparable to those of photomultiplier tubes. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)