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An alternative approach for optimal carrier concentration towards ideal thermoelectric performance
Author(s) -
Rawat Pankaj Kumar,
Paul Biplab,
Banerji P.
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206475
Subject(s) - thermoelectric effect , ytterbium , materials science , impurity , conduction band , redistribution (election) , condensed matter physics , valence band , thermal conduction , electron , doping , thermoelectric materials , thermodynamics , optoelectronics , band gap , physics , quantum mechanics , composite material , politics , political science , law
Optimization of the carrier concentration of any thermoelectric material is a prime factor for the enhancement of the thermoelectric figure of merit. An alternative approach for achieving optimal carrier concentration is presented here. We introduce impurity levels of ytterbium (Yb) near the valence band edge of Pb 1– x Sn x Te. The temperature‐dependent redistribution of electrons between the Yb‐impurity levels and the valence band is found to optimize the excess hole concentration at low temperature and negating the effect of intrinsic conduction at higher temperature leading to significantly improved thermoelectric performance in Pb 1– x Sn x Te. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)