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Transparent p‐NiO/n‐ZnO diodes used in circuit rectifiers
Author(s) -
Bae Heesun,
Lee Kyung Ha,
Lee Kwang H.,
Song Jong Han,
Im Seongil
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206420
Subject(s) - optoelectronics , materials science , diode , responsivity , non blocking i/o , fabrication , indium tin oxide , rectification , nanotechnology , electrical engineering , thin film , voltage , photodetector , chemistry , medicine , biochemistry , alternative medicine , engineering , pathology , catalysis
We report on the fabrication of a transparent photostable cell circuit composed of drive and resistor diodes which are face‐to‐face connected to each other with different device area. The diodes consisted of e‐beam evaporated p‐NiO on sputter‐deposited n‐ZnO for p/n diode formation on indium‐tin‐oxide glass. Our transparent diodes show photostable rectifying behavior, about 10 3 on/off current ratio and even dynamic rectification at a maximum frequency of 100 Hz AC input signal in ambient light. The noticeable photo‐responsivity of the circuit was obtained only under ultraviolet (UV) light. We conclude that our transparent diode circuit is promising in enriching the field of transparent device electronics. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)