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Observing electronic structures on ex‐situ grown topological insulator thin films
Author(s) -
Yao S. H.,
Zhou B.,
Lu M. H.,
Liu Z. K.,
Chen Y. B.,
Analytis J. G.,
Brüne C.,
Dang W. H.,
Mo S.K.,
Shen Z.X.,
Fisher I. R.,
Molenkamp L. W.,
Peng H. L.,
Hussain Z.,
Chen Y. L.
Publication year - 2013
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206400
Subject(s) - topological insulator , angle resolved photoemission spectroscopy , photoemission spectroscopy , surface states , thin film , topology (electrical circuits) , molecular beam epitaxy , dirac fermion , epitaxy , materials science , electronic structure , x ray photoelectron spectroscopy , condensed matter physics , nanotechnology , optoelectronics , physics , surface (topology) , layer (electronics) , graphene , geometry , mathematics , nuclear magnetic resonance , combinatorics
AbstractTopological insulators represent a new state of quantum matter recently discovered with insulating bulk but conducting surface states formed by an odd number of Dirac fermions. In this Letter, we report our recent progress on the study of electronic structures of ex‐situ grown topological insulator thin films by angle resolved photoemission spectroscopy (ARPES). We successfully obtained the topological band structures of molecular beam epitaxial HgTe and vapor–solid grown Bi 2 Te 3 thin films after proper surface cleaning procedures. This new development will not only enable us to study more topological insulators that cannot be measured by conventional in‐situ ARPES technique (e.g. by cleaving or growing samples in‐situ ), but also open the door to directly characterize the electronic properties of topological insulators used in functional devices. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)