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Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications
Author(s) -
Park Sangsu,
Jung Seungjae,
Siddik Manzar,
Jo Minseok,
Park Jubong,
Kim Seonghyun,
Lee Wootae,
Shin Jungho,
Lee Daeseok,
Choi Godeuni,
Woo Jiyong,
Cha Euijun,
Lee Byoung Hun,
Hwang Hyunsang
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206382
Subject(s) - resistive random access memory , reset (finance) , schottky barrier , optoelectronics , materials science , non volatile memory , scalability , nanotechnology , chemistry , computer science , electrode , diode , database , financial economics , economics
We propose a selector‐less Pr 0.7 Ca 0.3 MnO 3 (PCMO) based resistive‐switching RAM (RRAM) for high‐density cross‐point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height ( Φ eff ), i.e., self‐formed Schottky barrier. In addition, a scalable 4F 2 selector‐less cross‐point 1 kb RRAM array has been successfully fabricated, demonstrating set, reset, and read operation for high cell efficiency and high‐density memory applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)