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High‐performance solution‐processed amorphous ZrInZnO thin‐film transistors
Author(s) -
Chung YaWei,
Chen FangChung,
Chen YingPing,
Chen YuZe,
Chueh YuLun
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206323
Subject(s) - thin film transistor , materials science , amorphous solid , transistor , optoelectronics , subthreshold swing , zirconium , threshold voltage , layer (electronics) , indium , crystallization , subthreshold conduction , voltage , nanotechnology , chemical engineering , electrical engineering , chemistry , metallurgy , crystallography , engineering
We have developed amorphous zirconium‐indium‐zinc‐oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm 2 /Vs, an on–off ratio of ∼10 7 , a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin‐film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)