Premium
Host structure dependence of light yield and proportionality in scintillators in terms of hot and thermalized carrier transport
Author(s) -
Li Qi,
Grim Joel Q.,
Ucer K. B.,
Burger A.,
Bizarri G. A.,
Moses W. W.,
Williams R. T.
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206258
Subject(s) - halide , chemistry , quenching (fluorescence) , scintillator , electron , semiconductor , yield (engineering) , kinetic energy , ionization , diffusion , charge carrier , atomic physics , molecular physics , materials science , condensed matter physics , physics , fluorescence , optoelectronics , optics , inorganic chemistry , thermodynamics , ion , nuclear physics , organic chemistry , quantum mechanics , detector
Several outstanding questions, including why complex halide scintillator host structures allow higher light yield and flatter electron energy response than simple monovalent metal halides, have remained unanswered by current models of luminescence in dense ionization tracks. Our measurements of nonlinear quenching kinetic order, recent literature on hot‐electron transport in scintillators, and calculations presented here of hot‐electron velocity from band structure of SrI 2 and NaI, lead us to expand our previously described diffusion and nonlinear quenching model to include hot‐electron transport. Trends in multivalent versus monovalent metal halides, heavier versus lighter halides, and halides versus oxides versus semiconductors can be predicted based on optical phonon frequency, thermalized band edge mobilities, velocity in the upper conduction bands, and hole self‐trapping. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)