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Influence of Ga coverage on the sizes of GaAs quantum dash pairs grown by high temperature droplet epitaxy
Author(s) -
Wu Jiang,
Wang Zhiming M.,
Li Shibin,
Lee Jihoon,
Mazur Yuriy I.,
Salamo Gregory J.
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206236
Subject(s) - dash , epitaxy , quantum , molecular beam epitaxy , quantum well , photoluminescence , materials science , bar (unit) , condensed matter physics , optoelectronics , physics , nanotechnology , optics , quantum mechanics , laser , layer (electronics) , meteorology , computer science , operating system
We investigate the formation of GaAs quantum dash pairs with different coverages by droplet epitaxy. The GaAs quantum dash pairs of various sizes are fabricated by high temperature droplet epitaxy. Dual‐sized quantum dash pairs are observed along $[01\bar 1]$ orientation. Depending on the Ga cov‐ erage, the width of the quantum dash pairs can be tuned from ∼100 nm to ∼300 nm while keeping the height in the range of 4 nm to 10 nm. The coverage dependence of quantum dash pairs is also confirmed with photoluminescence measurement. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)