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Band alignment at sputtered ZnS x O 1– x /Cu(In,Ga)(Se,S) 2 heterojunctions
Author(s) -
Kieven D.,
Grimm A.,
Lauermann I.,
LuxSteiner M. Ch.,
Palm J.,
Niesen T.,
Klenk R.
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206195
Subject(s) - heterojunction , x ray photoelectron spectroscopy , analytical chemistry (journal) , materials science , conduction band , valence band , chalcopyrite , photoemission spectroscopy , band gap , crystallography , chemistry , optoelectronics , copper , nuclear magnetic resonance , physics , metallurgy , chromatography , quantum mechanics , electron
Valence band offsets Δ E VBM at ZnS x O 1– x /Cu(In,Ga)(Se,S) 2 (CIGSSe) heterojunctions have been studied by photoemission spectroscopy (XPS, UPS) as a function of composition x in sputtered ZnS x O 1– x films. In the composition range from ZnO to ZnS we found Δ E VBM between –(2.1 ± 0.3) eV and –(0.8 ± 0.4) eV, respectively. Considering the optical band gaps, the conduction band offsets Δ E CBM range from –(0.1 ± 0.3) eV to +(1.4 ± 0.4) eV. These results suggest that sputtered ZnS x O 1– x is suitable as substitution for the CdS buffer and ZnO window layers in standard chalcopyrite‐based solar cells. Current–voltage characteristics of the solar cells have been investigated as a function of the composition x . (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)