Band alignment at sputtered ZnS  x   O 1– x  /Cu(In,Ga)(Se,S) 2  heterojunctions | Zendy

Kieven D. | Zendy; Grimm A. | Zendy; Lauermann I. | Zendy; LuxSteiner M. Ch. | Zendy; Palm J. | Zendy; Niesen T. | Zendy; Klenk R. | Zendy

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Band alignment at sputtered ZnS x O 1– x /Cu(In,Ga)(Se,S) 2 heterojunctions

Author(s) -

Kieven D.,

Grimm A.,

Lauermann I.,

LuxSteiner M. Ch.,

Palm J.,

Niesen T.,

Klenk R.

Publication year - 2012

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201206195

Subject(s) - heterojunction , x ray photoelectron spectroscopy , analytical chemistry (journal) , materials science , conduction band , valence band , chalcopyrite , photoemission spectroscopy , band gap , crystallography , chemistry , optoelectronics , copper , nuclear magnetic resonance , physics , metallurgy , chromatography , quantum mechanics , electron

Valence band offsets Δ E VBM at ZnS x O 1– x /Cu(In,Ga)(Se,S) 2 (CIGSSe) heterojunctions have been studied by photoemission spectroscopy (XPS, UPS) as a function of composition x in sputtered ZnS x O 1– x films. In the composition range from ZnO to ZnS we found Δ E VBM between –(2.1 ± 0.3) eV and –(0.8 ± 0.4) eV, respectively. Considering the optical band gaps, the conduction band offsets Δ E CBM range from –(0.1 ± 0.3) eV to +(1.4 ± 0.4) eV. These results suggest that sputtered ZnS x O 1– x is suitable as substitution for the CdS buffer and ZnO window layers in standard chalcopyrite‐based solar cells. Current–voltage characteristics of the solar cells have been investigated as a function of the composition x . (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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