Thermal instability of HfO 2  on InP structure with ultrathin Al 2 O 3  interface passivation layer | Zendy

An CheeHong | Zendy; Byun YoungChul | Zendy; Cho MannHo | Zendy; Kim Hyoungsub | Zendy

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Thermal instability of HfO 2 on InP structure with ultrathin Al 2 O 3 interface passivation layer

Author(s) -

An CheeHong,

Byun YoungChul,

Cho MannHo,

Kim Hyoungsub

Publication year - 2012

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201206178

Subject(s) - passivation , thermal stability , materials science , layer (electronics) , substrate (aquarium) , diffusion , thin film , deposition (geology) , instability , analytical chemistry (journal) , nanotechnology , chemical engineering , chemistry , geology , physics , thermodynamics , oceanography , chromatography , engineering , paleontology , sediment , mechanics

We studied the thermal stability of HfO 2 on an InP structure when an Al 2 O 3 interface passivation layer (PL) was introduced. In contrast to the thick (∼4 nm) Al 2 O 3 ‐PL, an almost complete disappearance of the thin (∼1 nm) Al 2 O 3 ‐PL was observed after a post‐deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al 2 O 3 ‐PL with HfO 2 , which might have been accompanied by the out‐diffusion of a substantial amount of substrate elements. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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