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Impact of substrate temperature and film thickness on the interfacial evolution during atomic layer deposition of HfO 2 on InP
Author(s) -
An CheeHong,
Byun YoungChul,
Lee Myung Soo,
Kim Hyoungsub
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206109
Subject(s) - atomic layer deposition , deposition (geology) , substrate (aquarium) , layer (electronics) , decomposition , materials science , diffusion , hafnium , diffusion barrier , chemical engineering , analytical chemistry (journal) , chemistry , nanotechnology , metallurgy , geology , zirconium , organic chemistry , paleontology , oceanography , physics , sediment , engineering , thermodynamics
The effects of both the deposition temperature and the HfO 2 film thickness on the interfacial layer (IL) evolution were studied when tetrakis(ethylmethylamino)hafnium and H 2 O based atomic layer deposition (ALD) was performed on InP substrates. While the self‐cleaning effect resulted in an IL‐free structure after formation of ∼2 nm thick HfO 2 at 200 °C and 250 °C, substantial IL growth occurred at 300 °C, probably due to simultaneous InP oxidation. Following further growth to ∼8 nm at 300 °C, the IL was almost removed and, in particular, a significant In incorporation into the HfO 2 film was observed, which was attributed to IL decomposition and subsequent out‐diffusion of the constituent elements. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)