Impact of substrate temperature and film thickness on the interfacial evolution during atomic layer deposition of HfO 2  on InP | Zendy

An CheeHong | Zendy; Byun YoungChul | Zendy; Lee Myung Soo | Zendy; Kim Hyoungsub | Zendy

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Impact of substrate temperature and film thickness on the interfacial evolution during atomic layer deposition of HfO 2 on InP

Author(s) -

An CheeHong,

Byun YoungChul,

Lee Myung Soo,

Kim Hyoungsub

Publication year - 2012

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201206109

Subject(s) - atomic layer deposition , deposition (geology) , substrate (aquarium) , layer (electronics) , decomposition , materials science , diffusion , hafnium , diffusion barrier , chemical engineering , analytical chemistry (journal) , chemistry , nanotechnology , metallurgy , geology , zirconium , organic chemistry , paleontology , oceanography , physics , sediment , engineering , thermodynamics

The effects of both the deposition temperature and the HfO 2 film thickness on the interfacial layer (IL) evolution were studied when tetrakis(ethylmethylamino)hafnium and H 2 O based atomic layer deposition (ALD) was performed on InP substrates. While the self‐cleaning effect resulted in an IL‐free structure after formation of ∼2 nm thick HfO 2 at 200 °C and 250 °C, substantial IL growth occurred at 300 °C, probably due to simultaneous InP oxidation. Following further growth to ∼8 nm at 300 °C, the IL was almost removed and, in particular, a significant In incorporation into the HfO 2 film was observed, which was attributed to IL decomposition and subsequent out‐diffusion of the constituent elements. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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