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Silicon heterojunction solar cell with amorphous silicon oxide buffer and microcrystalline silicon oxide contact layers
Author(s) -
Ding Kaining,
Aeberhard Urs,
Finger Friedhelm,
Rau Uwe
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206030
Subject(s) - materials science , silicon , optoelectronics , amorphous silicon , oxide thin film transistor , polymer solar cell , wafer , oxide , silicon oxide , crystalline silicon , heterojunction , nanocrystalline silicon , monocrystalline silicon , doping , solar cell , strained silicon , microcrystalline , layer (electronics) , nanotechnology , chemistry , thin film transistor , crystallography , silicon nitride , metallurgy
Abstract This Letter reports on the fabrication and characterization of silicon heterojunction solar cells with silicon oxide based buffer (intrinsic amorphous silicon oxide) and contact layers (doped microcrystalline silicon oxide) on flat p‐type wafers. The critical dependency of the cell performance on the front and rear buffer layer thickness reveals a trade‐off between the open circuit voltage V oc and the fill factor FF. At the optimum, the highest efficiency of 18.5% (active area = 0.67 cm 2 ) was achieved with V oc = 664 mV, short circuit current J sc = 35.7 mA/cm 2 and FF = 78.0%. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)