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Ge(100) surfaces prepared in vapor phase epitaxy process ambient
Author(s) -
Brückner Sebastian,
Barrigón Enrique,
Supplie Oliver,
Kleinschmidt Peter,
Dobrich Anja,
Löbbel Claas,
ReyStolle Ignacio,
Döscher Henning,
Hannappel Thomas
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201206028
Subject(s) - x ray photoelectron spectroscopy , epitaxy , hydrogen , analytical chemistry (journal) , spectroscopy , electron diffraction , infrared spectroscopy , fourier transform infrared spectroscopy , chemistry , phase (matter) , materials science , oxide , diffraction , nanotechnology , chemical engineering , optics , layer (electronics) , metallurgy , physics , organic chemistry , quantum mechanics , engineering , chromatography
Ge(100) substrates essential for subsequent III–V integration were studied in the hydrogen ambient of a metalorganic vapor phase epitaxy reactor. We confirmed thermal oxide and carbon removal by X‐ray photoelectron spectroscopy, characterized the (2 × 1)/(1 × 2) surface reconstruction by low energy electron diffraction, and employed reflection anisotropy spectroscopy for optical in situ analysis. Our Ge(100) spectra de‐ viate from reference data of clean surfaces prepared in ultra‐high vacuum, most probably due to the presence of hydrogen bonds. The observation was correlated with Fourier‐transform infrared spectroscopy showing coupled H–Ge–Ge–H stretch modes associated with a monohydride termination of the Ge(100) surface. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)