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Low‐temperature photoluminescence studies of In‐rich InAlN nanocolumns
Author(s) -
Kamimura Jumpei,
Kishino Katsumi,
Kikuchi Akihiko
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105564
Subject(s) - photoluminescence , molecular beam epitaxy , blueshift , materials science , spectral line , nanowire , wavelength , optoelectronics , red shift , epitaxy , analytical chemistry (journal) , nanotechnology , chemistry , physics , layer (electronics) , astronomy , chromatography , quantum mechanics , galaxy
High‐quality In x Al 1– x N (0.71 ≤ x In ≤ 1.00) nanocolumns (NCs) have been grown on Si(111) substrates by rf‐plasma‐assisted molecular‐beam epitaxy (rf‐MBE). Low‐temperature photoluminescence (LT‐PL) spectra of various In‐rich InAlN NCs were measured at 4 K and single peak PL emissions were observed in the wavelength region from 0.89 µm to 1.79 µm. Temperature‐dependent PL spectra of In 0.92 Al 0.08 N NCs were studied and the so‐called “S‐shape” (decrease–increase–decrease) PL peak energy shift was observed with increasing temperature. This shift indicates the carrier localization induced by the In segregation effect and is different from the anomalous blue shift frequently observed in InN films and nanowires with high residual carrier concentra‐ tions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)