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Influence of polymer dielectric surface energy on thin‐film transistor performance of solution‐processed triethylsilylethynyl anthradithiophene (TES‐ADT)
Author(s) -
Chen LiangHsiang,
Lin Pang,
Kim Choongik,
Chen MingChou,
Huang PengYi,
Ho JiaChong,
Lee ChengChung
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105534
Subject(s) - materials science , thin film transistor , dielectric , hysteresis , polyimide , thin film , transistor , polymer , surface energy , microstructure , dielectric loss , optoelectronics , composite material , nanotechnology , condensed matter physics , voltage , electrical engineering , layer (electronics) , physics , engineering
This study investigates the correlation between surface energy of polymer dielectrics and the film morphology, microstructure, and thin‐film transistor performance of solution‐processed 5,11‐bis(triethylsilylethynyl) anthradithiophene (TES‐ADT) films. The low surface energy polyimide (PI) dielectric induced large grains with strong X‐ray reflections for spin‐cast TES‐ADT films in comparison to high surface en‐ ergy poly(4‐vinyl phenol) (PVP) dielectric. Furthermore, thin‐film transistors based on spin‐cast TES‐ADT films on PI dielectric exhibited enhanced electrical performance, small hysteresis, and high stability under bias stress with carrier mobility as high as 0.43 cm 2 /Vs and a current on/off ratio of 10 7 . (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)