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Photoluminescence properties of selectively grown InN microcrystals
Author(s) -
Kamimura Jumpei,
Kishino Katsumi,
Kikuchi Akihiko
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105532
Subject(s) - photoluminescence , laser linewidth , materials science , excitation , semiconductor , polar , optoelectronics , condensed matter physics , optics , laser , physics , quantum mechanics , astronomy
We investigated the photoluminescence (PL) properties of regularly arranged N‐polar InN microcrystals with m ‐plane sidewall facets. We observed narrow PL emission at 0.678 eV with a linewidth of ∼14 meV at 4 K and a clear band‐filling effect with increasing excitation power. We also observed a normal red shift of the PL peak energy as large as 51 meV (∼150 nm) with increasing temperature from 4 to 300 K, similar to that observed for non‐degenerated semiconductors. The integrated PL intensity ratio I 300K / I 4K was measured to be 6.1%. These results indicate that InN microcrystals have a low residual carrier density and excellent optical properties without being adversely affected by surface electron accumulation, despite their relatively high surface area. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)