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Low voltage organic field effect transistors with a poly(hexylthiophene)–ZnO nanoparticles composite as channel material
Author(s) -
Machado Wagner S.,
Hümmelgen Ivo A.
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105525
Subject(s) - materials science , composite number , threshold voltage , polyvinyl alcohol , field effect transistor , nanoparticle , transistor , optoelectronics , semiconductor , voltage , insulator (electricity) , nanotechnology , electrical engineering , composite material , engineering
We report on solution processable organic field effect transistors prepared using a poly(3‐hexylthiophene)–ZnO nanoparticles composite as channel semiconductor material and cross‐linked polyvinyl alcohol as gate insulator. Our transistors show a field effect mobility of 0.35 ± 0.06 cm 2 /V s, threshold voltage of –1.30 ± 0.11 V, and I on / I off ratio of (1.0 ± 0.1) × 10 3 . (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)