Low voltage organic field effect transistors with a poly(hexylthiophene)–ZnO nanoparticles composite as channel material | Zendy

Machado Wagner S. | Zendy; Hümmelgen Ivo A. | Zendy

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Low voltage organic field effect transistors with a poly(hexylthiophene)–ZnO nanoparticles composite as channel material

Author(s) -

Machado Wagner S.,

Hümmelgen Ivo A.

Publication year - 2012

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201105525

Subject(s) - materials science , composite number , threshold voltage , polyvinyl alcohol , field effect transistor , nanoparticle , transistor , optoelectronics , semiconductor , voltage , insulator (electricity) , nanotechnology , electrical engineering , composite material , engineering

We report on solution processable organic field effect transistors prepared using a poly(3‐hexylthiophene)–ZnO nanoparticles composite as channel semiconductor material and cross‐linked polyvinyl alcohol as gate insulator. Our transistors show a field effect mobility of 0.35 ± 0.06 cm 2 /V s, threshold voltage of –1.30 ± 0.11 V, and I on / I off ratio of (1.0 ± 0.1) × 10 3 . (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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