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The Kondo effect in reduced graphene oxide films
Author(s) -
McIntosh Ross,
Bhattacharyya Somnath
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105493
Subject(s) - graphene , condensed matter physics , oxide , kondo effect , thermal conduction , weak localization , materials science , electron , magnetic field , nanotechnology , physics , magnetoresistance , metallurgy , quantum mechanics , composite material
The influence of spin in reduced graphene oxide (RGO) is demonstrated through a temperature dependent metal–insulator transition in resistance (at ∼30 K) as well as high field magneto‐resistance (MR) measurements. RGO samples, prepared using an unconventional organic acid reduction method, showed a quadratic temperature dependence of resistance at low temperatures, which changed to a logarithmic dependence at higher temperatures. Analysis of these features in RGO, combined with negative MR which scales with a Kondo characteristic temperature, establishes the interaction between conduction electrons propagating through intact graphene nano‐islands and localized magnetic moments found in disordered regions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)