The Kondo effect in reduced graphene oxide films | Zendy

McIntosh Ross | Zendy; Bhattacharyya Somnath | Zendy

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The Kondo effect in reduced graphene oxide films

Author(s) -

McIntosh Ross,

Bhattacharyya Somnath

Publication year - 2012

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201105493

Subject(s) - graphene , condensed matter physics , oxide , kondo effect , thermal conduction , weak localization , materials science , electron , magnetic field , nanotechnology , physics , magnetoresistance , metallurgy , quantum mechanics , composite material

The influence of spin in reduced graphene oxide (RGO) is demonstrated through a temperature dependent metal–insulator transition in resistance (at ∼30 K) as well as high field magneto‐resistance (MR) measurements. RGO samples, prepared using an unconventional organic acid reduction method, showed a quadratic temperature dependence of resistance at low temperatures, which changed to a logarithmic dependence at higher temperatures. Analysis of these features in RGO, combined with negative MR which scales with a Kondo characteristic temperature, establishes the interaction between conduction electrons propagating through intact graphene nano‐islands and localized magnetic moments found in disordered regions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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