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Ultra‐sharp boron interfaces for delta doped diamond structures
Author(s) -
Volpe P. N.,
Tranchant N.,
Arnault J. C.,
Saada S.,
Jomard F.,
Bergonzo P.
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105480
Subject(s) - diamond , boron , doping , substrate (aquarium) , materials science , residence time (fluid dynamics) , optoelectronics , nanotechnology , chemical physics , analytical chemistry (journal) , engineering physics , chemistry , metallurgy , environmental chemistry , geology , physics , oceanography , geotechnical engineering , organic chemistry
Delta doping of diamond constitutes a very promising route to fabricate novel generation of high power and high frequency electronic devices. However, the achievement of abrupt interfaces between highly boron doped and undoped layers requires the shortest residence times of reactive species in the substrate vicinity. We report here on an innovative gas injection system especially designed to reduce this residence time. This technique was applied to fabricate sharp rising and decaying boron interfaces. According to SIMS profiles, the sharpest profiles were obtained on decaying interfaces exhibiting doping gradients close to 1.5 nm per decade over five decades of boron concentrations, namely from 10 16 to 10 21 atoms/cm 3 . (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)