Gallium and indium co‐doped ZnO thin films for white light emitting diodes | Zendy

Chirakkara Saraswathi | Zendy; Krupanidhi S. B. | Zendy

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Gallium and indium co‐doped ZnO thin films for white light emitting diodes

Author(s) -

Chirakkara Saraswathi,

Krupanidhi S. B.

Publication year - 2012

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201105455

Subject(s) - materials science , photoluminescence , doping , indium , diode , gallium , optoelectronics , white light , thin film , electroluminescence , boron , light emitting diode , nanotechnology , layer (electronics) , chemistry , metallurgy , organic chemistry

Ga and In co‐doped ZnO (GIZO) thin films together with ZnO, In‐doped ZnO (IZO), Ga‐doped ZnO (GZO), and IZO/GZO multilayer for comparison, were grown on corning glass and boron doped Si substrates by PLD. The photoluminescence spectra of GIZO showed a strong white light emission and the current–voltage characteristics showed relatively lower turn‐on voltage and larger forward current. The CIE coordinates for GIZO were observed to be (0.31, 0.33) with a correlated colour temperature of 6650 K, indicating a cool white light, and establishing a possibility of white light emitting diodes. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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