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In‐situ X‐ray photoelectron spectroscopy of trimethyl aluminum and water half‐cycle treatments on HF‐treated and O 3 ‐oxidized GaN substrates
Author(s) -
Sivasubramani Prasanna,
Park Tae Joo,
Coss Brian E.,
Lucero Antonio,
Huang Jie,
Brennan Barry,
Cao Yu,
Jena Debdeep,
Xing Huili Grace,
Wallace Robert M.,
Kim Jiyoung
Publication year - 2012
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105417
Subject(s) - x ray photoelectron spectroscopy , in situ , substrate (aquarium) , aluminium , sulfur , chemistry , spectroscopy , x ray , materials science , nuclear chemistry , analytical chemistry (journal) , chemical engineering , environmental chemistry , organic chemistry , oceanography , physics , quantum mechanics , engineering , geology
We have investigated the effect of trimethyl aluminum (TMA) and water (H 2 O) half‐cycle treatments on HF‐treated, and O 3 ‐oxidized GaN surfaces at 300 °C. The in‐situ X‐ray photoelectron spectroscopy results indicate no significant re‐growth of Ga–O–N or self‐cleaning on HF‐treated and O 3 ‐oxidized GaN substrates with exposure to water and TMA. This result is different from the self‐cleaning effect of Ga 2 O 3 seen on sulfur‐treated GaAs or InGaAs substrates. O 3 causes aggressive oxidation of GaN substrate and direct O–N bonding compared to H 2 O. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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