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Epitaxial CVD growth of sp 2 ‐hybridized boron nitride using aluminum nitride as buffer layer
Author(s) -
Chubarov Mikhail,
Pedersen Henrik,
Högberg Hans,
Darakchieva Vanya,
Jensen Jens,
Persson Per O. Å.,
Henry Anne
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105410
Subject(s) - elastic recoil detection , boron nitride , epitaxy , raman spectroscopy , chemical vapor deposition , nitride , sapphire , materials science , stoichiometry , analytical chemistry (journal) , layer (electronics) , substrate (aquarium) , transmission electron microscopy , boron , thin film , chemistry , nanotechnology , optics , laser , physics , oceanography , organic chemistry , chromatography , geology
Abstract Epitaxial growth of sp 2 ‐hybridized boron nitride (BN) using chemical vapour deposition, with ammonia and triethyl boron as precursors, is enabled on sapphire by introducing an aluminium nitride (AlN) buffer layer. This buffer layer is formed by initial nitridation of the substrate. Epitaxial growth is verified by X‐ray diffraction measurements in Bragg–Brentano configuration, pole figure measurements and transmission electron microscopy. The in‐plane stretching vibration of sp 2 ‐hybridized BN is observed at 1366 cm –1 from Raman spectroscopy. Time‐of‐flight elastic recoil detection analysis confirms almost perfect stoichiometric BN with low concentration of carbon, oxygen and hydrogen contaminations. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)