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Defect engineering of room‐temperature ferromagnetism of carbon‐doped ZnO
Author(s) -
Hsu H. S.,
Tung Y.,
Chen Y. J.,
Chen M. G.,
Lee J. S.,
Sun S. J.
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105395
Subject(s) - ferromagnetism , dopant , annealing (glass) , materials science , doping , carbon fibers , ferromagnetic material properties , condensed matter physics , magnetic semiconductor , oxygen , analytical chemistry (journal) , metallurgy , optoelectronics , chemistry , magnetization , magnetic field , composite material , composite number , physics , environmental chemistry , organic chemistry , quantum mechanics
This study investigates the role of carbon (C) in room‐temperature (RT) ferromagnetic C:ZnO films. RT ferromagnetism can be observed in air‐annealed C:ZnO samples. However, no feature that could be attributed to the incorporation of carbon at O sites (C O ) was observed. An analysis of MCD spectra of the ferromagnetic C:ZnO sample included a non‐ferromagnetic peak and a ferromagnetic one. These are related to the loss of carbon and the creation of defects in an air‐annealed C:ZnO film by the reaction between C dopants and oxygen. We suggest even if the C dopants are not at C O sites, C is still a novel dopant to make ZnO ferromagnetic in controlling the defects in the structure formed by suitable post‐annealing. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)