The effects of a HfO 2  buffer layer on Al 2 O 3 ‐passivated indium‐gallium‐zinc‐oxide thin film transistors | Zendy

Ko Youngbin | Zendy; Bang Seokhwan | Zendy; Lee Seungjun | Zendy; Park Soyeon | Zendy; Park Joohyun | Zendy; Jeon Hyeongtag | Zendy

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The effects of a HfO 2 buffer layer on Al 2 O 3 ‐passivated indium‐gallium‐zinc‐oxide thin film transistors

Author(s) -

Ko Youngbin,

Bang Seokhwan,

Lee Seungjun,

Park Soyeon,

Park Joohyun,

Jeon Hyeongtag

Publication year - 2011

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201105340

Subject(s) - passivation , thin film transistor , materials science , layer (electronics) , gallium , indium , oxide thin film transistor , optoelectronics , zinc , buffer (optical fiber) , oxide , nanotechnology , metallurgy , electrical engineering , engineering

In this study, the effects of a HfO 2 buffer layer between an Al 2 O 3 passivation layer and an indium‐gallium‐zinc‐oxide (IGZO) thin film transistor (TFT) were investigated to enhance the environmental stability and electrical properties of the IGZO TFT. When applying the HfO 2 buffer layer, the formation of HfAl x O y at the Al 2 O 3 /HfO 2 interface reduces the water vapor transmission rate (WVTR) due to densification of the passivation layer. Consequently, by adding the HfO 2 buffer layer, WVTR of the TFT was highly improved; moreover, changes in the electrical characteristics can be prevented compared to both the non‐passivated and Al 2 O 3 ‐passivated TFTs. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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