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Free standing modulation doped core–shell GaAs/AlGaAs hetero‐nanowires
Author(s) -
Spirkoska Dance,
Fontcuberta i Morral Anna,
Dufouleur Joseph,
Xie Qiushi,
Abstreiter Gerhard
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105338
Subject(s) - nanowire , core (optical fiber) , doping , materials science , molecular beam epitaxy , shell (structure) , photoconductivity , optoelectronics , modulation (music) , resistive touchscreen , epitaxy , nanotechnology , electrical engineering , physics , composite material , layer (electronics) , engineering , acoustics
Modulation doped AlGaAs/GaAs core–shell nanowire structures were grown by molecular beam epitaxy. A Si delta‐doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatures. However, they show a pronounced persistent photoconductivity effect indicating activation of free carriers from the delta‐doped shell to the GaAs core. The n‐type character of the channel is demonstrated by applying a back‐gate voltage. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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