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Memristive switching behavior in Pr 0.7 Ca 0.3 MnO 3 by incorporating an oxygen‐deficient layer
Author(s) -
Park Sangsu,
Jung Seungjae,
Siddik Manzar,
Jo Minseok,
Lee Joonmyoung,
Park Jubong,
Lee Wootae,
Kim Seonghyun,
Sadaf Sharif Md.,
Liu Xinjun,
Hwang Hyunsang
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105317
Subject(s) - stoichiometry , x ray photoelectron spectroscopy , oxygen , homogeneous , layer (electronics) , materials science , analytical chemistry (journal) , chemistry , nanotechnology , physics , nuclear magnetic resonance , organic chemistry , chromatography , thermodynamics
We propose a homogeneous nanoscaled (∅ 250 nm) bilayered Pr 0.7 Ca 0.3 MnO 3 (PCMO)‐based memory device that exhibits low power and good memristive switching behavior. Accurate control of the oxygen‐deficient (PCMO 3– x ) layer thickness promotes oxygen migration between PCMO 3– x and stoichiometric PCMO (PCMO 3 ). The bilayered PCMO structure was confirmed by X‐ray photoelectron spectroscopy analysis. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)