Memristive switching behavior in Pr 0.7 Ca 0.3 MnO 3  by incorporating an oxygen‐deficient layer | Zendy

Park Sangsu | Zendy; Jung Seungjae | Zendy; Siddik Manzar | Zendy; Jo Minseok | Zendy; Lee Joonmyoung | Zendy; Park Jubong | Zendy; Lee Wootae | Zendy; Kim Seonghyun | Zendy; Sadaf Sharif Md. | Zendy; Liu Xinjun | Zendy; Hwang Hyunsang | Zendy

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Memristive switching behavior in Pr 0.7 Ca 0.3 MnO 3 by incorporating an oxygen‐deficient layer

Author(s) -

Park Sangsu,

Jung Seungjae,

Siddik Manzar,

Jo Minseok,

Lee Joonmyoung,

Park Jubong,

Lee Wootae,

Kim Seonghyun,

Sadaf Sharif Md.,

Liu Xinjun,

Hwang Hyunsang

Publication year - 2011

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201105317

Subject(s) - stoichiometry , x ray photoelectron spectroscopy , oxygen , homogeneous , layer (electronics) , materials science , analytical chemistry (journal) , chemistry , nanotechnology , physics , nuclear magnetic resonance , organic chemistry , chromatography , thermodynamics

We propose a homogeneous nanoscaled (∅ 250 nm) bilayered Pr 0.7 Ca 0.3 MnO 3 (PCMO)‐based memory device that exhibits low power and good memristive switching behavior. Accurate control of the oxygen‐deficient (PCMO 3– x ) layer thickness promotes oxygen migration between PCMO 3– x and stoichiometric PCMO (PCMO 3 ). The bilayered PCMO structure was confirmed by X‐ray photoelectron spectroscopy analysis. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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