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Tunnel injection emitter structures with barriers comprising nanobridges
Author(s) -
Senichev Alexander V.,
Talalaev Vadim G.,
Tomm Jens W.,
Zakharov Nikolai D.,
Novikov Boris V.,
Werner Peter,
Cirlin George E.
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105295
Subject(s) - common emitter , absorption (acoustics) , condensed matter physics , tunnel junction , range (aeronautics) , materials science , chemistry , physics , optoelectronics , composite material , quantum tunnelling
Nanobridges which bypass the tunnel barrier in tunnel injection structures are investigated. The conditions leading to the formation of confined states within them are determined. It is shown that for tunnel barrier thicknesses in the 4–5 nm range confined hole states are likely to exist within the nanobridges. A new absorption feature, which has been observed only in structures comprising nanobridges, is assigned to transitions involving these hole states. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)