Contact passivation in silicon solar cells using atomic‐layer‐deposited aluminum oxide layers | Zendy

Zielke Dimitri | Zendy; Petermann Jan Hendrik | Zendy; Werner Florian | Zendy; Veith Boris | Zendy; Brendel Rolf | Zendy; Schmidt Jan | Zendy

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Contact passivation in silicon solar cells using atomic‐layer‐deposited aluminum oxide layers

Author(s) -

Zielke Dimitri,

Petermann Jan Hendrik,

Werner Florian,

Veith Boris,

Brendel Rolf,

Schmidt Jan

Publication year - 2011

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201105285

Subject(s) - passivation , common emitter , silicon , layer (electronics) , materials science , aluminum oxide , aluminium , contact resistance , equivalent series resistance , oxide , atomic layer deposition , optoelectronics , solar cell , open circuit voltage , nanotechnology , metallurgy , voltage , electrical engineering , engineering

Atomic‐layer‐deposited aluminum oxide (AlO x ) layers are implemented between the phosphorous‐diffused n + ‐emitter and the Al contact of passivated emitter and rear silicon solar cells. The increase in open‐circuit voltage V oc of 12 mV for solar cells with the Al/AlO x /n + ‐Si tunnel contact compared to contacts without AlO x layer indicates contact passivation by the implemented AlO x . For the optimal AlO x layer thickness of 0.24 nm we achieve an independently confirmed energy conversion efficiency of 21.7% and a V oc of 673 mV. For AlO x thicknesses larger than 0.24 nm the tunnel probability decreases, resulting in a larger series resistance. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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