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Vacancy growth and migration dynamics in atomically thin hexagonal boron nitride under electron beam irradiation
Author(s) -
Alem Nasim,
Erni Rolf,
Kisielowski Christian,
Rossell Marta D.,
Hartel Peter,
Jiang Bin,
Gannett Will,
Zettl A.
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105262
Subject(s) - boron nitride , electron beam processing , boron , electron microscope , materials science , vacancy defect , electron , hexagonal boron nitride , thin film , irradiation , cathode ray , hexagonal crystal system , chemical physics , crystallography , nanotechnology , chemistry , optics , physics , graphene , organic chemistry , quantum mechanics , nuclear physics
Atomically thin hexagonal boron nitride (h‐BN) is investigated using aberration‐corrected ultra‐high resolution electron microscopy under 80 kV electron beam. This study focuses on the in situ formation, growth and migration of vacancies in h‐BN. This study also reveals interaction dynamics of edges and vacancies with adatoms and molecules under the electron beam. According to this investigation, boron monovacancies migrate through their second neighbor to reduce the surface energy of the membrane. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)